ChipNobo 4500V 1500A IGBT Module Data comparison
System
Nov 17
4
| ChipNobo 4500V 1500A IGBT Module Data comparison | |||
| # | Key Parameter Information | FZ1500R45KL3_B5 | CIM1500T450PMDA |
| 1 | Collector-emitter voltage Vces | 4500V | 4500V |
| 2 | Collector current IC | 1500A | 1500A |
| 3 | Collector peak current Icmax | 3000A | 3000A |
| 4 | Gate-emitter voltage VGES | ±20V | ±20V |
| 5 | Minimum on-time Tonmin | <10us | <10us |
| 6 | Collector-emitter saturation voltage VCEsat_25 | 2.7-3.05V | 2.55-2.95V |
| 7 | Short-circuit current ISC | 6900A | 6800A |
| 8 | Package thermal resistance Rthjc_IGBT | <7.4K/kW | <8K/kW |
| 9 | Package thermal resistance Rthjc_DIODE | 17K/kW | <11.7K/kW |
| 10 | Package thermal resistance Rthch_IGBT | 9K/kW(type) | 7K/kW(type) |
| 11 | Package thermal resistance Rthch_DIODE | 14K/kW | 8K/kW(type) |
| 12 | Operating junction temperature_IGBT | ‘-50-125℃ | ‘-40-150℃ |
| 13 | Operating junction temperature_DIODE | ‘-50-125℃ | ‘-40-150℃ |
| 14 | Isolation voltage VISO | 10.4KV | 10.2KV |
| 15 | Turn-on threshold VGETH | 5.4-6.6V | 5.8V-7V |
| 16 | Input capacitance CIES | 280nF | 445nF(type) |
| 17 | Reverse transfer capacitance CRES | 4.7nF | 0.27nF |
| 18 | Fall time Tf | 1020ns | 740ns |
| 19 | Rise time Tr | 210ns | 360ns |
| 20 | Collector turn-off current ICES | <5mA | <1mA |
| 21 | Gate resistance RGint | 0.75Ω | 1.5Ω |
| 22 | Reverse recovery charge Qr | 1300uC | 1130uC |
| 23 | Diode reverse recovery loss EREC | 2000mJ | 1495mJ |
| 24 | Diode reverse recovery current Irr | 1600A | 1295A |
| 25 | Turn-on energy loss Eon | 5200mJ | 5415mJ |
| 26 | Turn-on delay Td_on | 1075ns | 910ns |
| 27 | Turn-off delay Td_off | 1700ns | 3015ns |
| 28 | Gate charge Qg | 39.5uC | 25.6uC |
| 29 | Turn-off energy loss Eoff | 6050mJ | 2965mJ |
| 30 | Lead resistance RCC+EE | 0.12mΩ | 0.1mΩ |
| 31 | Module stray inductance LsCE | 18nH | 9nH |
欢迎工程师选型参考。
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