ChipNobo 4500V 1500A IGBT Module Data comparison

System Nov 17 4
ChipNobo 4500V 1500A IGBT Module Data comparison
# Key Parameter Information FZ1500R45KL3_B5 CIM1500T450PMDA
1 Collector-emitter voltage Vces 4500V 4500V
2 Collector current IC 1500A 1500A
3 Collector peak current Icmax 3000A 3000A
4 Gate-emitter voltage VGES ±20V ±20V
5 Minimum on-time Tonmin <10us <10us
6 Collector-emitter saturation voltage VCEsat_25 2.7-3.05V 2.55-2.95V
7 Short-circuit current ISC 6900A 6800A
8 Package thermal resistance Rthjc_IGBT <7.4K/kW <8K/kW
9 Package thermal resistance Rthjc_DIODE 17K/kW <11.7K/kW
10 Package thermal resistance Rthch_IGBT 9K/kW(type) 7K/kW(type)
11 Package thermal resistance Rthch_DIODE 14K/kW 8K/kW(type)
12 Operating junction temperature_IGBT ‘-50-125℃ ‘-40-150℃
13 Operating junction temperature_DIODE ‘-50-125℃ ‘-40-150℃
14 Isolation voltage VISO 10.4KV 10.2KV
15 Turn-on threshold VGETH 5.4-6.6V 5.8V-7V
16 Input capacitance CIES 280nF 445nF(type)
17 Reverse transfer capacitance CRES 4.7nF 0.27nF
18 Fall time Tf 1020ns 740ns
19 Rise time Tr 210ns 360ns
20 Collector turn-off current ICES <5mA <1mA
21 Gate resistance RGint 0.75Ω 1.5Ω
22 Reverse recovery charge Qr 1300uC 1130uC
23 Diode reverse recovery loss EREC 2000mJ 1495mJ
24 Diode reverse recovery current Irr 1600A 1295A
25 Turn-on energy loss Eon 5200mJ 5415mJ
26 Turn-on delay Td_on 1075ns 910ns
27 Turn-off delay Td_off 1700ns 3015ns
28 Gate charge Qg 39.5uC 25.6uC
29 Turn-off energy loss Eoff 6050mJ 2965mJ
30 Lead resistance RCC+EE 0.12mΩ 0.1mΩ
31 Module stray inductance LsCE 18nH 9nH

 

 

 

 

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