NB20060

Image for reference only

Global Brand Reference

Product type
Diode Arrays
Description
DIODE MODULE GP 600V 100A 3TOWER
Original MPN
MURTA20060
Manufacturer
GeneSiC Semiconductor

ChipNobo MPN

NB20060

  • High-reliability design
  • Long-term stable supply
  • RoHS compliant

Technical specification comparison (core parameters)

Parameter GeneSiC SemiconductorMURTA20060 ChipNoboNB20060 Match
Part Status Active Active
Mounting Type Chassis Mount Chassis Mount
Technology Standard Standard
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Voltage - DC Reverse (Vr) (Max) 600 V 600 V
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode) 100A 100A
Current - Reverse Leakage @ Vr 25 µA @ 600 V 25 µA @ 600 V
Package / Case Three Tower Three Tower
Supplier Device Package Three Tower Three Tower
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 100 A 1.7 V @ 100 A
RoHS Status RoHS Compliant RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)

Supply & lifecycle

Lifecycle status Active
NRND No
EOL No
PCN monitor No
Last buy date No Deadline
Alternate availability Sufficient
Application areas
On-Board Charger (OBC) EV DC/DC Converter
Server PSU 48V Power Shelf
Solar Inverter Energy Storage System (ESS)
PCS Power Conversion System DC Fast Charger
Industrial UPS Power Supply System
5G Base Station Air Conditioner

Compatibility verification

Package Match
Pin Match
Electrical Match
Operating Range Match
Qualification Match
Pin-to-pin Compatible

Pin-to-Pin Replacement Solutions

100% Pin-to-Pin Compatible • Same Package • Same Key Electrical Parameters • Same Application

ChipNobo Replacement

NB20060

100% Pin-to-Pin Compatible

Verified by ChipNobo CVR

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