CHIPNOBO
Semiconductor Replacement Engineering & Supply Continuity
Single FETs, MOSFETs
PRODUCT DATASHEET
ChipNobo MPN
NB3208LS
GLOBAL BRAND CROSS-REFERENCE
Transphorm
GANFET N-CH 650V 20A 3PQFN
TPH3208LS
- High-reliability design
- Long-term stable supply
- RoHS compliant
GANFET N-CH 650V 20A 3PQFN
1. PRODUCT POSITIONING
NB3208LS is a product identity corresponding to the reference product TPH3208LS. This document presents the available product specifications, mechanical/package information and compatibility summary for engineering and procurement reference.
This document is a product information. Compatibility conclusions should be read together with the applicable Cross-Reference Identification (CID) rule, package/pin verification and engineering review record.
| 2. TECHNICAL SPECIFICATION COMPARISON (core parameters) | |||
|---|---|---|---|
| Parameter | Transphorm TPH3208LS | ChipNobo NB3208LS | Match |
| Part Status | Active | Active | ✓ |
| Mounting Type | Surface Mount | Surface Mount | ✓ |
| FET Type | N-Channel | N-Channel | ✓ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | ✓ |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | ✓ |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) | 20A (Tc) | ✓ |
| Drain to Source Voltage (Vdss) | 650 V | 650 V | ✓ |
| Power Dissipation (Max) | 96W (Tc) | 96W (Tc) | ✓ |
| Vgs (Max) | ±18V | ±18V | ✓ |
| Technology | GaNFET (Gallium Nitride) | GaNFET (Gallium Nitride) | ✓ |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 400 V | 760 pF @ 400 V | ✓ |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 13A, 8V | 130mOhm @ 13A, 8V | ✓ |
| Vgs(th) (Max) @ Id | 2.6V @ 300µA | 2.6V @ 300µA | ✓ |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 8 V | 14 nC @ 8 V | ✓ |
| Supplier Device Package | 3-PQFN (8x8) | 3-PQFN (8x8) | ✓ |
| Package / Case | 3-PowerDFN | 3-PowerDFN | ✓ |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | 3 (168 Hours) | ✓ |