CHIPNOBO
Semiconductor Replacement Engineering & Supply Continuity
Single FETs, MOSFETs
PRODUCT DATASHEET
ChipNobo MPN
NB3A60DA(Q,M)
GLOBAL BRAND CROSS-REFERENCE
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 2.5A TO220SIS
TK3A60DA(Q,M)
- High-reliability design
- Long-term stable supply
- RoHS compliant
MOSFET N-CH 600V 2.5A TO220SIS
1. PRODUCT POSITIONING
NB3A60DA(Q,M) is a product identity corresponding to the reference product TK3A60DA(Q,M). This document presents the available product specifications, mechanical/package information and compatibility summary for engineering and procurement reference.
This document is a product information. Compatibility conclusions should be read together with the applicable Cross-Reference Identification (CID) rule, package/pin verification and engineering review record.
| 2. TECHNICAL SPECIFICATION COMPARISON (core parameters) | |||
|---|---|---|---|
| Parameter | Toshiba Semiconductor and Storage TK3A60DA(Q,M) | ChipNobo NB3A60DA(Q,M) | Match |
| Mounting Type | Through Hole | Through Hole | ✓ |
| Part Status | Active | Active | ✓ |
| FET Type | N-Channel | N-Channel | ✓ |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | ✓ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | ✓ |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) | ✓ |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) | 2.5A (Ta) | ✓ |
| Drain to Source Voltage (Vdss) | 600 V | 600 V | ✓ |
| Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | ✓ |
| Power Dissipation (Max) | 30W (Tc) | 30W (Tc) | ✓ |
| Vgs (Max) | ±30V | ±30V | ✓ |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 10 V | 9 nC @ 10 V | ✓ |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 25 V | 380 pF @ 25 V | ✓ |
| Supplier Device Package | TO-220SIS | TO-220SIS | ✓ |
| Vgs(th) (Max) @ Id | 4.4V @ 1mA | 4.4V @ 1mA | ✓ |
| Rds On (Max) @ Id, Vgs | 2.8Ohm @ 1.3A, 10V | 2.8Ohm @ 1.3A, 10V | ✓ |
| RoHS Status | RoHS Compliant | RoHS Compliant | ✓ |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | ✓ |